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ECOLE SUPÉRIEURE D'ÉLECTRICITÉ Une grande école d'ingénieurs au cœur des sciences de l'information,de l'énergie et des systèmes |
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ECOLE SUPÉRIEURE D'ÉLECTRICITÉ Une grande école d'ingénieurs au cœur des sciences de l'information,de l'énergie et des systèmes |
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| HAL : hal-00460556, version 1 |
| Fiche détaillée |  Récupérer au format |
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| BRETAGNE SAXE SYMPOSIUM - GLOBAL CHALLENGES FOR SUSTAINABLE DEVELOPMENT, Rennes : France (2010) |
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| Oxynitrides Perovskites Thin Films : Photoelectrochemical Measurement Under Visible Light |
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| Laurent Le Gendre 1Akio Ishikawa 2 |
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| (25/02/2010) |
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| The question of finding a clean alternative to conventional energy has become an essential challenge for the scientific community. Hydrogen production by water splitting under visible light is one of the most innovative solutions. H2 production can be achieved, in the UV domain, by broad band-gap semiconducting oxides. The integration of nitrogen in the material's structure has been found to narrow the band gap of the material and thereby extend its photoactivity into the visible range. We have focused our efforts on the preparation and characterization of original LaTiOxNy thin films. The films, deposited by reactive RF magnetron sputtering on Nb-doped SrTiO3 substrates under a range of conditions were found to develop different crystalline structures. Polycrystalline, oriented, or epitaxially grown thin films were thus obtained and tested. The films have been characterized by XRD, EDS, SEM, AFM, and UV-visible spectroscopy. Through current-potential measurements, it was demonstrated that these oxynitride films function as n-type semiconductors with band gaps of 2.05 to 2.35 eV. The modification of the catalyst surface by deposition of a co-catalyst (IrO2) was found to significantly enhance the photocurrent associated with the water oxidation. The band-gap positions of all of the LaTiOxNy films have been determined and are suitable for the oxidation and reduction of water |
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| 1 : | Institut d'Electronique et de Télécommunications de Rennes (IETR) |
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CNRS : UMR6164 – Université de Rennes 1 – Institut National des Sciences Appliquées (INSA) - Rennes – SUPELEC |
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| 2 : | Department of Chemical System Engineering |
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University of Tokyo |
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| 3 : | Institut des Sciences Chimiques de Rennes |
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CNRS : UMR6226 – Université de Rennes 1 – Institut National des Sciences Appliquées (INSA) - Rennes – Ecole Nationale Supérieure de Chimie de Rennes |
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| Matériaux fonctionnels (MF) |
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| Domaine | : | Chimie/Matériaux |
| hal-00460556, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00460556 | |
| oai:hal.archives-ouvertes.fr:hal-00460556 | |
| Contributeur : Laurent Le Gendre | |
| Soumis le : Lundi 1 Mars 2010, 15:49:58 | |
| Dernière modification le : Jeudi 31 Janvier 2013, 12:50:45 | |
