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A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range

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https://hal.archives-ouvertes.fr/hal-00391851
Contributor : Chahla Domenget Connect in order to contact the contributor
Submitted on : Friday, June 5, 2009 - 9:46:35 AM
Last modification on : Tuesday, October 19, 2021 - 10:59:14 AM

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  • HAL Id : hal-00391851, version 1

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D. Bauza. A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range. in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008. ⟨hal-00391851⟩

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