3D AFM Characterization of the Edge Roughness of Silicon High Q Resonators

P. Schiavone (1, 2) , M. Martin (2) , P. Alipour (3) , A.A Eftekhar (3) , S. Yegnanarayanan (3) , A. Adibi (3)

1 Georgia Tech Lorraine [Metz]
2 LTM - Laboratoire des technologies de la microélectronique
3 ECE GeorgiaTech - School of Electrical and Computer Engineering - Georgia Insitute of Technology

Nanophotonic resonators are very sensitive to sidewall roughness. We investigate in detail the sidewall roughness, correlation length and fractal roughness exponent for high Q silicon resonators using a 3D AFM

Domaines: Optique / photonique

P. Schiavone, M. Martin, P. Alipour, A.A Eftekhar, S. Yegnanarayanan, et al.. 3D AFM Characterization of the Edge Roughness of Silicon High Q Resonators. Conference on Lasers and Electro-Optics 2010, May 2010, San Jose (CA), United States. ⟨hal-00462233⟩