Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals - FMNT - Fédération Micro- et Nano- Technologies Accéder directement au contenu
Communication Dans Un Congrès Année : 2010

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals

T. Ouisse
  • Fonction : Auteur
J.M. Dedulle
  • Fonction : Auteur
M. Pons
R. Madar
  • Fonction : Auteur
D. Chaussende

Résumé

The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique
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Dates et versions

hal-00517405 , version 1 (14-09-2010)

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Citer

G.L. Sun, I.G. Galben-Sandulache, T. Ouisse, J.M. Dedulle, M. Pons, et al.. Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.63-66, ⟨10.4028/www.scientific.net/MSF.645-648.63⟩. ⟨hal-00517405⟩
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