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Article Dans Une Revue Journ. Appl. Phys. Année : 2009

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

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hal-00596113 , version 1 (26-05-2011)

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  • HAL Id : hal-00596113 , version 1

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M. Cassé, F. Rochette, L. Thevenod, N. Bhouri, F. Andrieu, et al.. A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors. Journ. Appl. Phys., 2009, 105 (8), pp.084503:1-9. ⟨hal-00596113⟩
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