Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

K.I. Na (1, 2) , S. Cristoloveanu (1) , Y.H. Bae (3) , P. Patruno (4) , W. Xiong (5) , J.H. Lee (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 School of Electrical Engineering [Korea University]
3 Uiduk university, Gyeongju
4 SOITEC
5 Texas Instrument

Domaines: Autre [cond-mat.other]

K.I. Na, S. Cristoloveanu, Y.H. Bae, P. Patruno, W. Xiong, et al.. Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs. Solid-State Electronics, 2009, 53 (2), pp.150-153. ⟨hal-00596168⟩