Controlled growth of SiGe nanowires by addition of HCl in the gas phase

A. Potié (1) , T. Baron (1) , L. Latu-Romain (1) , G. Rosaz (1, 2) , B. Salem (1) , L. Montes (3) , P. Gentile (2) , J. Kreisel (3) , Hervé Roussel (3)

1 LTM - Laboratoire des technologies de la microélectronique
2 SiNaps - Silicon Nanoelectronics Photonics and Structures
3 LMGP - Laboratoire des matériaux et du génie physique

Domaines: Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

A. Potié, T. Baron, L. Latu-Romain, G. Rosaz, B. Salem, et al.. Controlled growth of SiGe nanowires by addition of HCl in the gas phase. Journal of Applied Physics, 2011, 110 (2), pp.024311. ⟨hal-00641300⟩