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Materials and processes in UV-assisted nanoimprint lithography

Abstract : Nanoimprint lithography (NIL), first proposed by S. Chou in 1995 [1], is a high resolution and high throughput lithography technique based on the mechanical deformation of a resist layer with a stamp (or mold) presenting a surface topography (including eventually three-dimensional (3D) features). A schematic of this technique is shown in Figure 1.1. After the pattern formation, the polymer layer may be used as a resist mask for additional processing steps (transfer etching in the substrate, ion implantation, material deposition, lift-off . . .), or this layer may be used as it is, as a functional material. A residual resist layer is always observed under the mold protrusions after imprinting. This layer can be removed with an anisotropic 'breakthrough' plasma etching step to obtain a conventional lithography resist mask [...]
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https://hal.archives-ouvertes.fr/hal-00667189
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Submitted on : Tuesday, September 27, 2022 - 2:26:23 PM
Last modification on : Wednesday, September 28, 2022 - 8:35:18 AM

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Marc Zelsmann, Jumana Boussey. Materials and processes in UV-assisted nanoimprint lithography. Generating Micro- and Nanopatterns on Polymeric Surfaces, A. Del Campo, E. Arzt, pp.3-26, 2011, ⟨10.1002/9783527633449.ch1⟩. ⟨hal-00667189⟩

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