Seed Surface Preparation for SiC Sublimation Growth

Bernard Pelissier (1) , Cécile Moulin (2) , Etienne Pernot (1) , Mikhail Anikin (1) , Philippe Grosse (2) , Christian Faure (2) , Bernard Ferrand (2) , M. Couchaud (2) , Gérard Basset (2) , Roland Madar (1)

1 LMGP - Laboratoire des matériaux et du génie physique
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

The seed surface preparation for SiC sublimation growth has been investigated. Two methods have been developed to prepare and improve the seed surface contribution during the growth initiation: An in-situ sublimation etching of the seed is performed, and, the seed surface is prepared by ex-situ polishing and chemical and ozone cleaning. Both methods promote a better lateral growth mechanism, and then promote the prefered step flow growth mechanism. This results in a better crystalline quality of the crystals in terms of mosai:city, polytype stability and micropipe density.

Mots clés: Ex-Situ Seed Preparation; In Situ Sublimation Etching; Step Flow Growth; Sublimation Growth

Domaines: Physique [physics]

Bernard Pelissier, Cécile Moulin, Etienne Pernot, Mikhail Anikin, Philippe Grosse, et al.. Seed Surface Preparation for SiC Sublimation Growth. Materials Science Forum, 2000, 338/342, pp.47-50. ⟨10.4028/www.scientific.net/MSF.338-342.47⟩. ⟨hal-00685132⟩