Electrical characterisation of Vertical Gate-All-Around Si and SiGe Nanowires Field Effect Transistors

B. Salem (1) , G. Rosaz (1, 2) , N. Pauc (2) , P. Gentile (2) , A. Potié (1) , T. Baron (1) , L. Dupré (2) , P. Periwal (1) , L. Latu-Romain (1) , S. David (1)

1 LTM - Laboratoire des technologies de la microélectronique
2 SiNaps - Silicon Nanoelectronics Photonics and Structures

Domaines: Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

B. Salem, G. Rosaz, N. Pauc, P. Gentile, A. Potié, et al.. Electrical characterisation of Vertical Gate-All-Around Si and SiGe Nanowires Field Effect Transistors. E-MRS Warsaw, 2012, Sep 2012, Warsaw, Poland. ⟨hal-00777309⟩