Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

M.K. Joo (1) , J. Huh , M. Mouis (1) , S.J. Park (1) , D.Y. Jeon (1) , D. Jang , J.H. Lee , G.T. Kim , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Domaines: Micro et nanotechnologies/Microélectronique

M.K. Joo, J. Huh, M. Mouis, S.J. Park, D.Y. Jeon, et al.. Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors. Applied Physics Letters, 2013, 102 (Issue 5), pp.053114. ⟨10.1063/1.4788708⟩. ⟨hal-01017436⟩