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hal-00393599v1  Journal articles
A. OhataM. CasseS. Cristoloveanu. Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method
Solid-State Electronics, Elsevier, 2007, 51(2), pp.245-251
hal-00994304v1  Journal articles
C. FernandezN. RodriguezA. OhataF. GamizF. Andrieu et al.  Bias-Engineered Mobility in Advanced FD-SOI MOSFETs
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34 (7), pp.840-842. ⟨10.1109/LED.2013.2264045⟩
hal-00148994v1  Book sections
S. CristoloveanuR. RitzenthalerA. OhataO. Faynot. 3D size effects in advanced SOI devices
World Scientific, Selected Topics in Electronics and Systems. 3D size effects in advanced SOI devices, Frontiers in Electronics, pp.9-30, 2006