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hal-00602814v1  Conference papers
T. BertaudC. BermondT. LacrevazCorentin ValléeY. Morand et al.  Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
18th Materials for Advanced Metallization Conference, Mar 2009, Grenoble, France
hal-00461101v1  Conference papers
V. JousseaumeJ. BuckleyY. BernardP. GononCorentin Vallée et al.  Back-end-of-line integration approaches for resistive memories
IITC 2009 – Hokkaido (Japon), 2009, hokaido, Japan
hal-00925819v1  Conference papers
Corentin ValléeL. DussaultE. Despiau-PujoE. GourvestD. Jourde et al.  PECVD of GeTe for next generation of non volatile memory
18th International Colloquium on Plasma Processes (CIP), Jul 2011, rennes, France
hal-00777990v1  Conference papers
S. MaitrejeanG. GhezziE. GourvestA. RouleF. Fillot et al.  Phase Change Memories Challenges: A Material and Process Perspective
IEEE International Interconnect Technology Conference - IITC, 2012, San Jose, United States
hal-00949998v1  Conference papers
F. PiallatR. GassilloudB. PelissierCédric LerouxP. Caubet et al.  (PE)ALD TaCN film nucleation and growth on TiNx: influence of nitrogen content
25th International Conference on Amorphous and Nano-crystalline Semiconductors, ICANS25, Aug 2013, Toronto, Canada
hal-00669561v1  Conference papers
Corentin ValléeP. GononF. El KamelE. GourvestMyrtil L. Kahn et al.  Influence of oxygen vacancies on the nonlinear behaviour of high k MIM capacitors
Workshop on Dielectrics in Microelectronics (WoDiM), Jun 2008, Berlin, Germany
hal-00669537v1  Conference papers
C. MannequinP. GononCorentin ValléeA. SalaünV. Jousseaume et al.  Time dependent resistance switching in HfO2 probed under a constant voltage stress mode
2012 MRS Spring Meeting, Apr 2012, San Francisco, United States
hal-00669410v1  Journal articles
T. BertaudC. BermondF. ChallaliA. GoulletCorentin Vallée et al.  Ultra wide Band frequency of integrated TiTaO-based metal-insulator-metal devices
Journal of Applied Physics, American Institute of Physics, 2011, pp.1107 044110
hal-00486158v1  Conference papers
Corentin ValléeC. DurandC. DubourdieuS. BlonkowskiMyrtil L. Kahn et al.  Y2O3 MIM capacitors
Workshop "Nouveaux oxydes à forte permittivité..", 2005, autrans, France
hal-00908482v1  Conference papers
C. MannequinCorentin ValléeP. GononL. Latu-RomainC. Guedj et al.  HfO2 based ReRAM: an experimental point of view
2013 MRS Spring Meeting, 2013, San Francisco, United States
hal-00669564v1  Conference papers
E. GourvestMyrtil L. KahnCorentin ValléeP. GononCorentin Jorel et al.  Improved electrical properties using high work function electrode materials for MIM capacitors applications
Workshop on Dielectrics in Microelectronics (WoDiM), Jun 2008, Berlin, Germany
hal-01073558v1  Journal articles
T. BertaudS. BlonkowskiC. BermondCorentin ValléeP. Gonon et al.  Frequency effect on voltage linearity of ZrO2 based RF Metal-Insulator-Metal capacitors
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31 (2), pp.114-116
hal-00390544v1  Conference papers
B. PelissierC. DurandCorentin ValléeM. BonvalotL. Vallier et al.  Pulsed Plasma Enhanced MOCVD of high k Y2O3 layers for gate dielectric applications
Présentation MRS 2002 (fall meeting), 2002, boston, United States
hal-00486345v1  Conference papers
B. PelissierC. DurandCorentin ValléeM. BonvalotL. Vallier et al.  Etch mechanisms of SiOC and selectivity to SiO2 and SiC in fluoro carbon based Plasmas
49th International AVS Symposium & Topical Conferences, 2002, Denver, United States
hal-00486337v1  Conference papers
C. DurandB. PelissierCorentin ValléeM. BonvalotL. Vallier et al.  Pulsed Injection Plasma Enhanced MOCVD of high k Y2O3 layers for gate dielectric Application
49th International AVS Symposium & Topical Conferences, 2002, Denver, United States
hal-00390546v1  Conference papers
Corentin ValléeC. DurandB. PelissierM. BonvalotC. Dubourdieu et al.  Structural properties of high k Y2O3 layers prepared by Pulsed injection Plasma
Présentation MRS 2002 (fall meeting), 2002, Boston, United States