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hal-00596168v1  Journal articles
K.I. NaS. CristoloveanuY.H. BaeP. PatrunoW. Xiong et al.  Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs
Solid-State Electronics, Elsevier, 2009, 53 (2), pp.150-153
hal-00596129v1  Journal articles
K. RomanjekE. AugendreW. van den DaeleB. GrandchampL. Sanchez et al.  Improved GeOI substrates for pMOSFET off-state leakage control
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1585-1588
hal-00604758v1  Conference papers
S. Cristoloveanu. Ultrathin SOI and GeOI Materials and Transistors. Invited paper
IEEE Electron Device Society Mini-Colloquium XX,, Mar 2010, Daegu, South Korea
hal-00603670v1  Conference papers
N. RodriguezF. GámizS. Cristoloveanu. Characterization, modelling and simulation of Sub-45nm SOI devices
International Semiconductor Conference, Oct 2009, Sinaia, Romania. pp.57-63
hal-00604959v1  Conference papers
G. GhibaudoM. MouisL. Pham-NguyenK. BennamaneI. Pappas et al.  Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS Devices
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
hal-00604943v1  Conference papers
S. CristoloveanuM. BawedinN. RodriguezK.-H. ParkA. Hubert et al.  New concepts for 1T-DRAMs on SOI.
Workshop on Innovative Memory Technology, MINATEC Crossroads'10, Jun 2010, Grenoble, France
hal-00393600v1  Journal articles
K. AkarvardarS. CristoloveanuM. BawedinP. GentilB.J Blalock et al.  Thin film fully-depleted SOI four-gate transistors
Solid-State Electronics, 2007, 51(2), pp.278-84 (
hal-00603703v1  Conference papers
K.-Y. NaS. CristoloveanuY-H. BaeW. XiongC.R. Cleavelin et al.  Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs.
Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press, May 2009, United States
hal-00604644v1  Conference papers
T. BenoistC. Fenouillet-BerangerP. PerreauC. BujP. Galy et al.  ESD robustness of FDSOI gated diode for ESD network design: thin or thick BOX?
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
hal-00604938v1  Conference papers
S. Cristoloveanu. Advanced SOI and multi-gate transistors : special mechanisms and characterization.
1st International Training Courses on Compact Modelling,, Jun 2010, Tarragona, Spain
hal-00392072v1  Conference papers
K.I. NaS. CristoloveanuY.-H. BaeW. XiongC.R. Cleavelin et al.  Coupling and short-channel effect with gate-drain distance and gate lengths in triple-gate MOSFETs based on silicon-on-insulator (SOI) substrate.
Joint Meeting (214th Meeting of the Electrochemical Soc. and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Symposium E1 'Solid State Divisions General Session', Honolulu, Hawaii, USA, Oct 2008, Japon, Japan
hal-00466356v1  Journal articles
C. GallonC. Fenouillet-BerangerS. DenormeF. BoeufV. Fiori et al.  Mechanical and electrical analysis of strained liner effect in 35 nm fully depleted silicon-on-insulator devices with ultra thin silicon channels
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2006, pp.Part1- 45 Issue: 4B (2006) 3058-3063
hal-00994383v1  Journal articles
A. DiabI. IonicaG. GhibaudoS. Cristoloveanu. RC Model for Frequency Dependence of Split C-V Measurements on Bare SOI Wafers
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34 (6), pp.792-794. ⟨10.1109/LED.2013.2257663⟩
hal-00996418v1  Journal articles
S.J. ChangM. BawedinW.D. XiongJ.H. LeeS. Cristoloveanu. FinFETs with ONO BOX for multi-bit unified memory
Microelectronic Engineering, Elsevier, 2013, 109, pp.330-333. ⟨10.1016/j.mee.2013.03.049⟩
hal-00596074v1  Journal articles
L. Pham-NguyenC. Fenouillet-BerangerA. VandoorenT. SkotnickiG. Ghibaudo et al.  In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30 (10), pp.1075-1077. ⟨10.1109/LED.2009.2027141⟩
hal-00994546v1  Journal articles
A. VillalonC. Le RoyerM. CasseD. CooperJ.-M. Hartmann et al.  Experimental Investigation of the Tunneling Injection Boosters for Enhanced ION ETSOI Tunnel FET
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (12), pp.4079-4084. ⟨10.1109/TED.2013.2287610⟩