Skip to Main content Skip to Navigation
New interface


hal-00669437v1  Journal articles
A. LacosteStéphane BéchuY. ArnalJean PelletierCorentin Vallée et al.  Nitrogen profiles in materials implanted via plasma-based ion implantation
Surface and Coatings Technology, Elsevier, 2002, 156, pp.125-130
hal-00475794v1  Journal articles
L. DesvoiresL. VallierO. Joubert. X-ray photoelectron Spectroscopy investigation of sidewall passivation films formed during gate etch processes
Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2001, B19 (2), pp.420
hal-00477274v1  Journal articles
J.H. Tortai. Modeling of ultra thin resist films structure after spin-coating and post-applied bake
Microelectronic Engineering, Elsevier, 2004, Volumes 73-74, pp.Pages 223-227
hal-00475891v1  Journal articles
L. MollardG. CungeS. TedescoB. DalzottoJ. Foucher. HSQ hybrid lithography for 20 nm CMOS devices development
Microelectronic Engineering, Elsevier, 2002, pp.61-62, 755
hal-00849863v1  Journal articles
N. TroscomptM. BesacierM. Saïb. Assessment of the scatterometry capability to detect an etch process deviation
SPIE Optical Metrology IV, 2013, SPIE Optical Metrology IV
hal-00951008v1  Journal articles
V. ConstantoudisE. Pargon. Evaluation of methods for noise-free measurement of LER/LWR using synthesized CD-SEM images
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2013, pp.8681, 86812L. ⟨10.1117/12.2018245⟩
hal-00808681v1  Journal articles
L. AzarnoucheE. PargonK. MengueltiM. FouchierM. Brihoum et al.  Plasma treatments to improve Linewidth roughness during gate patterning
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2012, Vol. 8328, 83280H, 11pp
hal-00488353v1  Journal articles
O. JoubertP. Czuprynski. Characterization of dielectric etching processes by X-ray photoelectron spectroscopy analyses in high aspect ratio contact holes
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 1999, pp.Vol.38, 6154
hal-00466333v1  Journal articles
Lg. GossetS. ChhunW. BeslingT. VanypreA. Farcy et al.  Interest and characterization of a hybrid CoWP/SiCN architecture for sub-65 nrn technology nodes
Advanced Metallization Conference 2005 AMC, 2006, pp.587-593
hal-00936969v1  Journal articles
T. FigueiroC. BrowningM. J. ThorntonC. VannuffelK.-H. Choi et al.  Extreme long range process effects characterization and compensation
Proc. SPIE 8886, 29th European Mask and Lithography Conference, 2013, pp.88860F. ⟨10.1117/12.2030664⟩
hal-00777814v1  Journal articles
V. JousseaumeO. GourhantP. GononA. ZenasniL. Favennec. Dielectric constant of porous ultra low-k thin films
Journal of The Electrochemical Society, Electrochemical Society, 2012, pp.159, G49
hal-00777842v1  Journal articles
C. MannequinP. GononCorentin ValléeL. Latu-RomainA. Bsiesy et al.  Stress-induced leakage current and trap generation in HfO2 thin films
Journal of Applied Physics, American Institute of Physics, 2012, pp.112 (2012) 074103
hal-00596115v1  Journal articles
L. SouriauT. NguyenE. AugendreR. LooV. Terzieva et al.  High-hole-mobility silicon germanium on insulator substrates with high crystalline quality obtained by the germanium condensation technique
Journal of The Electrochemical Society, Electrochemical Society, 2009, 156 (3), pp.H208-H213