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hal-00391851v1  Books
D. Bauza. A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range
in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008