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hal-00391851v1  Books
D. Bauza. A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range
in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008
hal-00393993v1  Books
R. BocquetN. BreuilLaurent ChusseauJ.-L. CoutazP. Crozat et al.  Optoélectronique térahertz
Jean-Louis Coutaz. EDP Sciences, EDP Sciences (2008), pp.360 / 100-106, 138-154, 162-166, 2008, 978-2-86883-975-6