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Influence des défauts enterrés dans les masques pour la lithographie Extreme Ultra Violet

Abstract : In microelectronic industry, the key process that permits to decrease the size of the integrated circuits is the lithography. This step will determine the minimal size on the wafer. Nowadays, standard optical lithography reaches their limits and new generation techniques rise up. Extreme Ultra Violet Lithography is one promising technique that will permit to decrease resolution size with a high wafer throughput. In EUV spectra, most of the materials absorb light that impose to work in a vacuum environment with all reflective optics based on molybdenum – silicon multilayer. Defects present during the multilayer deposition process will damage the mask performance and can be printed during the lithography process.
The aim of this PhD work is to study defect influence in the EUV mask. For this, we have performed electromagnetic simulation and experimental work with the manufacture of a programmed mask defect. This mask has been exposed on a EUV tool at the ALS synchrotron. Defect growth within the multilayer has also been studied and permits to highlight smoothing effect of the defect. Finally, we have implemented an at wavelength dark field microscopy technique in order to probe tens of nanometres buried defect.
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Contributor : Vincent Farys Connect in order to contact the contributor
Submitted on : Friday, March 9, 2007 - 2:47:27 PM
Last modification on : Friday, March 25, 2022 - 11:09:52 AM
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  • HAL Id : tel-00135902, version 1



Vincent Farys. Influence des défauts enterrés dans les masques pour la lithographie Extreme Ultra Violet. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2006. Français. ⟨NNT : ⟩. ⟨tel-00135902⟩



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