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Élaboration et caractérisation de matériaux à très faible constante diélectrique de type a-SiOCH élaborés par PECVD : application aux interconnexions des circuits intégrés

Abstract : The enhancement of integrated circuits performances needs the development of new materials, like ultra low permittivity dielectrics, called Ultra Low-K (K<=2,5). This study focus on porous SiOCH thin films elaborated by PECVD via a "porogen" approach. This approach consists in the deposition of a SiOCH matrix containing organics inclusions which are removed afterwards, via a post-treatment, to create porosity. The first part of this study shows that the porogen approach extension has led to materials having a dielectric constant of 2.25 by using an industrial process with a UV assisted thermal curing as post-treatment. Some of these materials have been integrated in demonstrators. In the second part of this study, elaboration process impact on chemical structure has been analysed to better understand mechanical behaviour of these materials. Finally, a characterization method has been set up to measure the different contributions to the dielectric constant (electronic, ionic and dipolar). Then, the evolution of these contributions as a function of the elaboration parameters
has been studied.
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https://tel.archives-ouvertes.fr/tel-00373417
Contributor : Olivier Gourhant Connect in order to contact the contributor
Submitted on : Sunday, April 5, 2009 - 4:15:40 PM
Last modification on : Friday, March 25, 2022 - 11:09:53 AM
Long-term archiving on: : Saturday, November 26, 2016 - 7:12:27 AM

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  • HAL Id : tel-00373417, version 1

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Olivier Gourhant. Élaboration et caractérisation de matériaux à très faible constante diélectrique de type a-SiOCH élaborés par PECVD : application aux interconnexions des circuits intégrés. Matériaux. Université Joseph-Fourier - Grenoble I, 2008. Français. ⟨NNT : ⟩. ⟨tel-00373417⟩

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