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Nanofils de Silicium : Dépôt chimique en phase vapeur assisté par catalyseurs métalliques et prémices d'intégration.

Abstract : Microelectronics has its back to the wall. One of the possible ways to pursue its development is the “bottomup” approach, whose philosophy can be enounced as follows : “grow the device you want where you want”. The unidimensionnal structures, and more precisely the semiconductor nanowires, belong to this topic. In the present manuscript, we study the growth of silicon nanowires by metallic particles assisted chemical vapor deposition. First of all, we study the growth of silicon nanowires with gold as catalyst and silane as precursor gas, via the vapor-liquid-solid growth mechanism (VLS). We are more particularly interested in the impact of the growth parameters (reactant gas partial pressure, temperature, deposition time, catalyst size) on the nanowires morphology and their growth kinetics. The addition of HCl to the reactant mixture is investigated. In a second time, we focus on the growth of branched nanostructures. First, an experimental approach coupled with a thermodynamic one, has enabled us to determine the necessary condition to the growth of the nanobranches (and nanowires) of small diameters (i.e. < 10 nm), by VLS. Then we present the growth of these branched structures obtained at temperature going down to 100 °C below the macroscopic eutectic of the Au-Si system. Since gold is an undesirable material for many microelectronics applications, due to the fact it induces deep level traps in silicon, we have investigated the growth of Si NWs using CMOS compatible catalysts: metallic silicide particles (platinum, nickel and palladium silicides). In this case, the Si NWs grow via the vapor-solid-solid growth mechanism. Finally, we give some examples of technological integration, with the growth of localized Si NWs fields, and the realization of Si NWs based MOSFET-like devices, which have been electrically caracterized.
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Contributor : Florian Dhalluin Connect in order to contact the contributor
Submitted on : Friday, June 25, 2010 - 2:52:11 PM
Last modification on : Friday, March 25, 2022 - 11:09:16 AM
Long-term archiving on: : Monday, September 27, 2010 - 11:21:25 AM


  • HAL Id : tel-00495316, version 1



Florian Dhalluin. Nanofils de Silicium : Dépôt chimique en phase vapeur assisté par catalyseurs métalliques et prémices d'intégration.. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2009. Français. ⟨NNT : ⟩. ⟨tel-00495316⟩



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