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Élaboration et caractérisation large bande de matériaux "high-k" en structure "MIM"

Abstract : To improve the electrical performances of integrated circuits (integration density, speed and reliability), high permittivity materials are introduced in passive components, including "Metal-Insulator-Metal" (MIM) capacitors. Many dielectrics, with a permittivity ranging from mean (SixNy, Ta2O5, HfO2, ZrO2) to very high (perovskites SrTiO3 and BaTiO3) through the alloy of several elements (HfTiO, TiTaO or Pb(ZrxTi1-x)O3) are widely studied as promising candidates. These components and materials are designed to operate at frequencies higher and higher, up to several gigahertz. The dielectric complex permittivity Er (real permittivity E'r and losses E''r) may vary with frequency: relaxation and resonances phenomena may occur. The characterization of these materials and the performances evaluation of components integrating these dielectrics become necessary over a wide frequency band. This thesis aims to obtain the electrical characteristics of dielectrics over a wide frequency band, from DC to several tens of gigahertz, in an in-situ configuration, i.e. in thin films and with the same processes of integration of the final MIM component. For this, a generic tool, from the development of the technology necessary to realize test structures to the high frequency extraction procedures of the material properties, has been developed, validated through SixNy and then applied to some dielectrics: AlN [1], TiTaO [2], HfO2 and ZrO2 [3,4]. [1] T. Bertaud et al., Microelectron. Eng. 88, 564 (2011). [2] T. Bertaud et al., J. Appl. Phys. 110, 044110 (2011). [3] T. Bertaud et al., IEEE Electr. Device L. 31 (2), 114 (2010). [4] T. Bertaud et al., IEEE T. Compon. Pack. 2 (3), 502 (2012).
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Contributor : Thomas Bertaud Connect in order to contact the contributor
Submitted on : Thursday, January 13, 2011 - 9:51:53 AM
Last modification on : Friday, March 25, 2022 - 11:09:44 AM
Long-term archiving on: : Thursday, April 14, 2011 - 2:37:34 AM


  • HAL Id : tel-00555345, version 1



Thomas Bertaud. Élaboration et caractérisation large bande de matériaux "high-k" en structure "MIM". Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2010. Français. ⟨NNT : ⟩. ⟨tel-00555345⟩



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