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Etude de la croissance de nanofils de Si Ge et caractérisation par microscopie à force atomique

Abstract : Study of SiGe nanowires growth by chemical vapour deposition and characterization by atomic force microscopy.The use of semiconductor nanowires as building block for futur devices is a promising way of improving their performances. Moreover, \SiGe alloy is valuable for today’s microelectronics. In the present work, the catalyzed growth mechanisms of SiGe nanowires are studied and new methods for nanowire caracterisation using AFM are developped.First, gold catalyzed SiGe nanowire growth by CVD is studied. A better control of SiGe nanwires morphology and composition is then achieved by introducing HCl in the gas phase. A qualitative model based on our observations is proposed to explain the role of HCl.Second, we study the growth of SiGe nanowires using CMOS compatibles silicides, and pure Ge nanowires growth at low temperature. We also present the elaboration of heterostructured nanowire using different catalysts.Finally, single nanowire Young modulus is measured thanks to different AFM methods and a new approach for piezoelctric nanowire caracterisation using AFM is described.
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Submitted on : Thursday, December 20, 2012 - 3:48:19 PM
Last modification on : Friday, March 25, 2022 - 9:41:28 AM
Long-term archiving on: : Thursday, March 21, 2013 - 3:52:38 AM


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  • HAL Id : tel-00767918, version 1



Alexis Potié. Etude de la croissance de nanofils de Si Ge et caractérisation par microscopie à force atomique. Autre. Université de Grenoble, 2012. Français. ⟨NNT : 2012GRENT008⟩. ⟨tel-00767918⟩



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