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Article Dans Une Revue Semiconductor Science and Technology Année : 2020

3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Oleksandr Stepanenko
Stéphane Calvez
Guilhem Almuneau

Résumé

We demonstrate an Interband Cascade Resonant Cavity Light Emitting Diode (IC-RCLED) operating near 3.3 µm at room temperature. The device is composed of a Sb-based type-II interband-cascade active zone enclosed between two distributed Bragg mirrors (DBR). The bottom high reflective DBR is composed of GaSb/AlAsSb quarter-wave layers. A metamorphic III-As region is grown after the active zone to benefit from the AlOx technology for efficient electro-optical confinement. The structure is finished with a top ZnS/Ge dielectric DBR. The devices with oxide aperture ranging from 5 to 35 µm were studied in the continuous wave (CW) regime. The fabricated IC-RCLEDs operated up to 80°C (set-up limited) and exhibited narrow emission spectra with a full width at half maximum (FWHM) of 21 nm, which is 20 times smaller compared with conventional IC-LEDs. The narrow emission line and its weak temperature dependence make the fabricated devices very attractive for low cost gas sensors.
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Dates et versions

hal-02959663 , version 1 (09-11-2020)

Identifiants

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Daniel Díaz-Thomas, Oleksandr Stepanenko, Michaël Bahriz, Stéphane Calvez, Thomas Batte, et al.. 3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth. Semiconductor Science and Technology, 2020, 35 (12), pp.125029. ⟨10.1088/1361-6641/abbebc⟩. ⟨hal-02959663⟩
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