Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs - GREYC electronique Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2019

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Résumé

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14 and 22 nm are studied. Low-frequency noise (LFN) measurements of the drain current have been carried out in the linear regime and showed that the in situ SiN thickness has no impact on the noise performance. S ID /I 2 D in the linear regime dependence over the gate overdrive shows that the channel noise is located under the gate and that the noise is not impacted by the thickness of the in situ SiN layer.

Domaines

Electronique
Fichier principal
Vignette du fichier
Rzin_TED_revised_august2019_main_document_FINAL.pdf (383.35 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02382779 , version 1 (07-06-2020)

Identifiants

Citer

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, et al.. Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩
75 Consultations
285 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More