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Article Dans Une Revue ACS photonics Année : 2021

Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling

Charlie Gréboval
Audrey Chu
Junling Qu
Adrien Khalili
Sang-Soo Chee
Hervé Aubin

Résumé

As narrow band gap nanocrystals become a viable building block for the design of infrared sensors, device design needs to match with their actual operating conditions. While in the near IR and shortwave infrared room temperature operation have been demonstrated, longer wavelengths still require low temperature operation requiring specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with low temperature detection. To reach this goal two key developments are proposed. First, we report gating of nanocrystal films from SrTiO3 used as a ferroelectric material leading to high gate capacitance with leakage and breakdown free operation in the 4-100 K range. Secondly, we demonstrate that this FET is compatible with a plasmonic resonator which role is to achieve strong light absorption from a thin film used as the channel of the FET. Combining three resonances, broad band absorption from 1.5 to 3 µm reaching 30% is demonstrated. Finally combining gate and enhanced light matter coupling, we show that detectivity can be as high as 10 12 jones for a device presenting a 3 µm cutoff wavelength and 30 K operation.
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Dates et versions

hal-03102784 , version 1 (07-01-2021)

Identifiants

Citer

Charlie Gréboval, Audrey Chu, Debora Vale Magalhaes, Julien Ramade, Junling Qu, et al.. Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling. ACS photonics, 2021, 8 (1), pp.259-268. ⟨10.1021/acsphotonics.0c01464⟩. ⟨hal-03102784⟩
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