RRAM-based non-volatile SRAM cell architectures for ultra-low-power applications

Hussein Bazzi (1, 2) , Adnan Harb (2) , Hassen Aziza (3, 1) , Mathieu Moreau (3, 1) , Abdallah Kassem

1 AMU - Aix Marseille Université
2 LIU - Lebanese International University
3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Static Random-Access Memories (SRAMs) have flourished in the memory market relying on their speed, power consumption and compatibility with standard CMOS process technology. Conventional SRAMs are characterized by volatility, limiting their role in applications where non-volatility is essential. Non-Volatile SRAMs (NVSRAMs) represent an appealing solution, where Resistive RAM (RRAM) can act as a non-volatile element for SRAM. RRAM relies on the basic physical phenomenon of operation called resistive switching. This paper presents different NVSRAM structures, while exploring their principle of operation. Also, a comparison in terms of area, speed, power consumption and design complexity is presented for three NVSRAM memory cells implemented in a 130-nm high voltage CMOS technology from STMicroelectronics.

Mots clés: Computing; Resistive Switching Memory (RRAM); Non-Volatile Static Random-Access Memory (NVSRAM); Area; Power Consumption; Switching Speed

Domaines: Micro et nanotechnologies/Microélectronique

Hussein Bazzi, Adnan Harb, Hassen Aziza, Mathieu Moreau, Abdallah Kassem. RRAM-based non-volatile SRAM cell architectures for ultra-low-power applications. Analog Integrated Circuits and Signal Processing, 2021, 106 (2), pp.351-361. ⟨10.1007/s10470-020-01587-z⟩. ⟨hal-03504286⟩