Non-volatile SRAM memory cells based on ReRAM technology

Hussein Bazzi (1, 2) , Adnan Harb (2) , Hassen Aziza (3) , Mathieu Moreau (1, 3)

1 AMU - Aix Marseille Université
2 LIU - Lebanese International University
3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Static Random-Access Memories (SRAMs) are very common in today's chip industry due to their speed and power consumption but are classified as volatile memories. Non-Volatile SRAMs (nvSRAMs) combine SRAM features with non-volatility. This combination has the advantage to retain data after power off or in the case of power failure, enabling energy-efficient and reliable systems under frequent power-off conditions. In this work, several nvSRAMs architectures based on Oxide Random-Access Memory (OxRAM) technology are presented and compared. OxRAMs are non-volatile memories considered as a subset of Resistive RAM (ReRAM) technology.

Mots clés: 1T1R ReRAM; Static Random-Access Memory (SRAM); Non-Volatile Static Random-Access Memory (nvSRAM); Power Consumption

Domaines: Micro et nanotechnologies/Microélectronique

Hussein Bazzi, Adnan Harb, Hassen Aziza, Mathieu Moreau. Non-volatile SRAM memory cells based on ReRAM technology. SN Applied Sciences, 2020, 2 (9), ⟨10.1007/s42452-020-03267-z⟩. ⟨hal-03504289⟩