Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

Salim Berrada (1) , Marc Bescond (2) , Nicolas Cavassilas (2) , Laurent Raymond (2) , Michel Lannoo (2)

1 IEF - Institut d'électronique fondamentale
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.

Domaines: Physique [physics]

Salim Berrada, Marc Bescond, Nicolas Cavassilas, Laurent Raymond, Michel Lannoo. Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions. Applied Physics Letters, 2015, 107 (15), pp.153508. ⟨10.1063/1.4933392⟩. ⟨hal-03517633⟩