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Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate

Abstract : The emergence of semiconductor nanowires (NWs) as a new class of functional materials has generated a great interest in the scientific community in the fields of electronics, photonics and energy. In this work, we report on the optical properties of telecom-band emitting InAs/InP quantum rod-nanowires (QR-NWs) grown on silicon substrates by gold catalyst assisted molecular beam epitaxy (MBE). The energies of A and B band transitions in wurtzite InAs QRs are numerically evaluated by finite element method (FEM) as a function of the QR geometry and strain and compared with the experimental results obtained from photoluminescence (PL). Temperature-dependent optical properties of the QR-NWs are studied revealing that the integrated PL intensity keeps up to 30% of its value at 14 K which testify a high stability of the PL intensity. Furthermore, the investigated nanostructure shows a room temperature emission wavelength at 1.55 μm. These results demonstrate a great promise for telecom-band III-V nanoemitters monolithically grown on silicon.
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https://hal.archives-ouvertes.fr/hal-03040324
Contributor : Catherine Bru Chevallier <>
Submitted on : Friday, December 4, 2020 - 11:51:44 AM
Last modification on : Wednesday, February 10, 2021 - 11:24:03 AM

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Mohamed Hadj Alouane, Olfa Nasr, Hammadi Khmissi, Bouraoui Ilahi, Gilles Patriarche, et al.. Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate. Journal of Luminescence, Elsevier, 2021, 231, pp.117814. ⟨10.1016/j.jlumin.2020.117814⟩. ⟨hal-03040324⟩

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