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BSIM3 parameters extraction of a 0.35 µm CMOS technology from 300K down to 77K

Abstract : In this work, we present a commercial 0.35 μm/3.3 V CMOS technology behaviour study of both linear and gate-enclosed transistors from room temperature down to 77 Kelvin. Cryogenic setup used to complete this study is first described. Measurement results are then discused and a model based on a BSIM3 parameters extraction is proposed.
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https://hal.sorbonne-universite.fr/hal-01520241
Contributor : Pascal Gomez Connect in order to contact the contributor
Submitted on : Wednesday, May 10, 2017 - 10:39:02 AM
Last modification on : Sunday, June 26, 2022 - 1:20:36 AM

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Laurent Varizat, Gérard Sou, Malik Mansour. BSIM3 parameters extraction of a 0.35 µm CMOS technology from 300K down to 77K. Journal of Physics: Conference Series, 2017, 834 (Conference : 1), ⟨10.1088/1742-6596/834/1/012002⟩. ⟨hal-01520241⟩

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