Effect of mechanical stresses on graphene-based devices - Laboratoire d'Electronique et Electromagnétisme Accéder directement au contenu
Article Dans Une Revue International Journal of Numerical Modeling Année : 2017

Effect of mechanical stresses on graphene-based devices

Résumé

In this work, we analyse the effect of mechanical stresses on graphene devices for application in flexible electronics. The possible Schottky contacts in the transistor are modeled through suitable transmission coefficients describing the tunnelling through the electrostatic potential along the graphene channel. The surface potential is determined by imposing an equality between the charges computed with a micro-and a macro-model. All these computation tools are explicitly dependent on the choice of geometrical parameters, thus allowing the description of uniform geometrical deformations due to strains along a given direction. Numerical results are computed and discussed.
Fichier principal
Vignette du fichier
01551820.pdf (924.88 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-01551820 , version 1 (12-03-2020)

Identifiants

Citer

Yi Zheng, Guido Valerio, Zhuoxiang Ren. Effect of mechanical stresses on graphene-based devices. International Journal of Numerical Modeling, 2017, 6, pp.1 - 11. ⟨10.1002/jnm.2233⟩. ⟨hal-01551820⟩
40 Consultations
87 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More