Study of Strain Effects on Carbon-Based Transistors With Semi-Analytic and Ab Initio Models

Yi Zheng (1) , Fernando Zanella (2) , Guido Valerio (1) , Cesar Dartora (2) , Zhuoxiang Ren (1)

1 L2E - Laboratoire d'Electronique et Electromagnétisme
2 Post-Graduate Program in Technology, PPGTE and Electronics Department, DAELN, Federal University of Technology--Paraná, Av. Sete de Setembro, 3165, 80230-901, Curitiba, Paraná, Brazil

In this paper, the current-voltage characteristics of a graphene-based transistor in the presence of external strain are computed with different methods. A simplified semi-analytic method allows fast computation of the electric parameters by granting a good accuracy. A more complex matrix method based on second quantized version of Schrodinger equation by means of non-equilibrium Green's function is used to validate the semi-analytic one. Both models are developed to evaluate the impact of mechanical stresses on this novel class of nano-transistors, where they are aimed for applications in the domain of flexible electronics.

Mots clés: Index Terms-Nanotransistors; graphene nanoribbon; deformation; non-equilibrium Green's function; flexible electronics

Domaines: Electromagnétisme

Yi Zheng, Fernando Zanella, Guido Valerio, Cesar Dartora, Zhuoxiang Ren. Study of Strain Effects on Carbon-Based Transistors With Semi-Analytic and Ab Initio Models. IEEE Transactions on Magnetics, 2018, 54 (3), pp.1 - 4. ⟨10.1109/TMAG.2017.2765705⟩. ⟨hal-01802421⟩