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A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor

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https://hal.sorbonne-universite.fr/hal-03167523
Contributor : Pascal Gomez Connect in order to contact the contributor
Submitted on : Friday, March 12, 2021 - 10:43:10 AM
Last modification on : Friday, January 21, 2022 - 3:29:32 AM

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  • HAL Id : hal-03167523, version 1

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Jiajia Chen, Shiyou Yang, Zhuoxiang Ren. A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor. Conference COMPUMAG 2019, Jul 2019, Paris, France. ⟨hal-03167523⟩

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