Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf> - SCM - Equipe Semiconducteurs en Couches Minces Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2014

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2

Résumé

High quality micrometer scale GaAs crystals were grown by chemical beam epitaxy from nanoscale Si seeds on a 0.6 nm thick SiO2 layer formed on Si(0 0 1). The use of small diameter openings is expected to lead to a dislocation-free relaxation and to the reduction of the antiphase defects. Thus, the so-formed GaAs crystals are found to be completely relaxed and antiphase boundaries free. The lateral epitaxy without misfit dislocation can evolve on the SiO2 layer that prevents the Si substrate from imposing its lattice parameter on the GaAs crystal. The effect of the growth temperature on the GaAs crystal materials quality was particularly studied by transmission electron microscopy and µ-Raman.
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Dates et versions

hal-01721160 , version 1 (01-03-2018)

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Charles Renard, Nikolay Cherkashin, Alexandre Jaffré, Timothée Molière, Géraldine Hallais, et al.. Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2. Journal of Crystal Growth, 2014, 401, pp.554-558. ⟨10.1016/j.jcrysgro.2014.01.065⟩. ⟨hal-01721160⟩
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