Effect of Intrinsic Capacitances and Time Necessary for Channel Creation in Silicon-Based Thin-Film Transistors

J.W. Jin , J.C. Vanel (1) , D. Daineka , Y. Bonnassieux , Sabri Janfaoui (2) , Khalid Kandoussi (2) , Nathalie . Coulon (2) , Tayeb Mohammed-Brahim (2)

1 LLR - Laboratoire Leprince-Ringuet
2 IETR - Institut d'Électronique et des Technologies du numéRique

J.W. Jin, J.C. Vanel, D. Daineka, Y. Bonnassieux, Sabri Janfaoui, et al.. Effect of Intrinsic Capacitances and Time Necessary for Channel Creation in Silicon-Based Thin-Film Transistors. AM-FPD12, 9th International Workshop on Active Matrix Flatpanel Display and Devices - TFT Technologies and FDP Materials, Jul 2012, Kyoto, Japan. pp.325-327. ⟨hal-00804455⟩