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Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy

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https://hal-supelec.archives-ouvertes.fr/hal-00320288
Contributor : Olivier Schneegans Connect in order to contact the contributor
Submitted on : Wednesday, September 10, 2008 - 4:09:29 PM
Last modification on : Thursday, June 17, 2021 - 3:47:35 AM

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  • HAL Id : hal-00320288, version 1

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José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. Superlattices and Microstructures, Elsevier, 2006, 40, pp.343-349. ⟨hal-00320288⟩

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