Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy

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https://hal-supelec.archives-ouvertes.fr/hal-00320288
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, September 10, 2008 - 4:09:29 PM
Last modification on : Wednesday, October 23, 2019 - 11:14:02 PM

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  • HAL Id : hal-00320288, version 1

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José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. Superlattices and Microstructures, Elsevier, 2006, 40, pp.343-349. ⟨hal-00320288⟩

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