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Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy

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https://hal-supelec.archives-ouvertes.fr/hal-00320298
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, September 10, 2008 - 4:26:00 PM
Last modification on : Wednesday, October 23, 2019 - 11:14:02 PM

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  • HAL Id : hal-00320298, version 1

Citation

José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. E-MRS 2006, 2006, France. ⟨hal-00320298⟩

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