Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment

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https://hal-supelec.archives-ouvertes.fr/hal-00321234
Contributor : Olivier Schneegans <>
Submitted on : Friday, September 12, 2008 - 4:06:14 PM
Last modification on : Monday, December 17, 2018 - 1:24:01 AM

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  • HAL Id : hal-00321234, version 1

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H. Belgacem, A. Merazga, Christophe Longeaud. Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment. Semiconductor Science and Technology, IOP Publishing, 2005, 20, pp.56-61. ⟨hal-00321234⟩

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