Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films

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https://hal-supelec.archives-ouvertes.fr/hal-00321252
Contributor : Olivier Schneegans <>
Submitted on : Friday, September 12, 2008 - 4:23:03 PM
Last modification on : Tuesday, October 8, 2019 - 3:20:10 PM

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  • HAL Id : hal-00321252, version 1

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M. Meaudre, Marie-Estelle Gueunier-Farret, R. Meaudre, Jean-Paul Kleider, S. Vignoli, et al.. Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films. Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.33531. ⟨hal-00321252⟩

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