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Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

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https://hal-supelec.archives-ouvertes.fr/hal-00321694
Contributor : Olivier Schneegans Connect in order to contact the contributor
Submitted on : Monday, September 15, 2008 - 4:39:34 PM
Last modification on : Thursday, June 17, 2021 - 3:47:40 AM

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  • HAL Id : hal-00321694, version 1

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Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. ⟨hal-00321694⟩

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