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Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Marie-Estelle Gueunier-Farret 1 Cyril Bazin 1 Jean-Paul Kleider 1 Christophe Longeaud 1 P. Bulkin D. Daineka T.H. Dao Pere Roca I Cabarrocas P. Descamps T. Kervyn de Meerenedre P. Loempoel M. Meaudre R. Meaudre
1 LGEP - Laboratoire de génie électrique de Paris
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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00321694
Contributor : Olivier Schneegans <>
Submitted on : Monday, September 15, 2008 - 4:39:34 PM
Last modification on : Monday, December 14, 2020 - 12:28:22 PM

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  • HAL Id : hal-00321694, version 1

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CNRS | SUPELEC | UPMC | SUP_LGEP | SORBONNE-UNIVERSITE

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Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. ⟨hal-00321694⟩

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