Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Marie-Estelle Gueunier-Farret; Cyril Bazin; Jean-Paul Kleider; Christophe Longeaud; P. Bulkin; D. Daineka; T.H. Dao; Pere Roca I Cabarrocas; P. Descamps; T. Kervyn de Meerenedre; P. Loempoel; M. Meaudre; R. Meaudre

Conference papers

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Marie-Estelle Gueunier-Farret ¹ Cyril Bazin ¹ Jean-Paul Kleider ¹ Christophe Longeaud ¹ P. Bulkin D. Daineka T.H. Dao Pere Roca I Cabarrocas P. Descamps T. Kervyn de Meerenedre P. Loempoel M. Meaudre R. Meaudre

1 LGEP - Laboratoire de génie électrique de Paris

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Conference papers

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https://hal-supelec.archives-ouvertes.fr/hal-00321694
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Submitted on : Monday, September 15, 2008 - 4:39:34 PM
Last modification on : Thursday, June 17, 2021 - 3:47:40 AM

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

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Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

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