Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements

J.A. Schmidt; Christophe Longeaud; R.R. Koropecki; Jean-Paul Kleider

Journal articles

Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements

J.A. Schmidt Christophe Longeaud ¹ R.R. Koropecki Jean-Paul Kleider ¹

1 LGEP - Laboratoire de génie électrique de Paris

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Journal articles

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https://hal-supelec.archives-ouvertes.fr/hal-00321725
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Submitted on : Monday, September 15, 2008 - 5:19:50 PM
Last modification on : Monday, December 14, 2020 - 12:28:22 PM

Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements

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Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements

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