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Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements

J.A. Schmidt Christophe Longeaud 1 R.R. Koropecki Jean-Paul Kleider 1
1 LGEP - Laboratoire de génie électrique de Paris
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https://hal-supelec.archives-ouvertes.fr/hal-00321725
Contributor : Olivier Schneegans Connect in order to contact the contributor
Submitted on : Monday, September 15, 2008 - 5:19:50 PM
Last modification on : Thursday, June 17, 2021 - 3:47:58 AM

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  • HAL Id : hal-00321725, version 1

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CNRS | SUPELEC | UPMC | SUP_LGEP | SORBONNE-UNIVERSITE | EC-PARIS

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J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, Jean-Paul Kleider. Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1024-1027. ⟨hal-00321725⟩

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