Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Document type :
Journal articles
Complete list of metadatas

https://hal-supelec.archives-ouvertes.fr/hal-00321731
Contributor : Olivier Schneegans <>
Submitted on : Monday, September 15, 2008 - 5:30:59 PM
Last modification on : Tuesday, October 8, 2019 - 3:20:10 PM

Identifiers

  • HAL Id : hal-00321731, version 1

Citation

Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1913-1916. ⟨hal-00321731⟩

Share

Metrics

Record views

129