Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

Document type :
Conference papers
Complete list of metadatas

https://hal-supelec.archives-ouvertes.fr/hal-00322269
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, September 17, 2008 - 10:41:24 AM
Last modification on : Thursday, November 22, 2018 - 2:26:45 PM

Identifiers

  • HAL Id : hal-00322269, version 1

Citation

A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. E-MRS 2007 Spring Meeting, 2007, France. ⟨hal-00322269⟩

Share

Metrics

Record views

208