Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden D.J. Rogers F. Hosseini Teherani T. Moudakir S. Gautier T. Aggerstam S. Ould Saad J. Martin Zakaria Djebbour 1 O. Durand G. Garry A. Lusson D. Mcgrouther J.N. Chapman
1 LGEP - Laboratoire de génie électrique de Paris
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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00322269
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Submitted on : Wednesday, September 17, 2008 - 10:41:24 AM
Last modification on : Thursday, November 22, 2018 - 2:26:45 PM

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  • HAL Id : hal-00322269, version 1

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A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. E-MRS 2007 Spring Meeting, 2007, France. ⟨hal-00322269⟩

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