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Device grade hydrogenated polymorphous silicon deposited at high rates

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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00322281
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, September 17, 2008 - 11:05:51 AM
Last modification on : Wednesday, October 21, 2020 - 2:01:29 PM

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  • HAL Id : hal-00322281, version 1

Citation

Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. ⟨hal-00322281⟩

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