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Conference papers

Device grade hydrogenated polymorphous silicon deposited at high rates

Yrebegnan Moussa Soro 1 A. Abramov Marie-Estelle Gueunier-Farret 1 E.V. Johnson Christophe Longeaud 1 Pere Roca I Cabarrocas Jean-Paul Kleider 1
1 LGEP - Laboratoire de génie électrique de Paris
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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00322281
Contributor : Olivier Schneegans Connect in order to contact the contributor
Submitted on : Wednesday, September 17, 2008 - 11:05:51 AM
Last modification on : Thursday, June 17, 2021 - 3:48:32 AM

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  • HAL Id : hal-00322281, version 1

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CNRS | SUPELEC | UPMC | SUP_LGEP | SORBONNE-UNIVERSITE | EC-PARIS

Citation

Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. ⟨hal-00322281⟩

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