Skip to Main content Skip to Navigation
Conference papers

Device grade hydrogenated polymorphous silicon deposited at high rates

Document type :
Conference papers
Complete list of metadata

https://hal-supelec.archives-ouvertes.fr/hal-00322281
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, September 17, 2008 - 11:05:51 AM
Last modification on : Thursday, June 17, 2021 - 3:48:32 AM

Identifiers

  • HAL Id : hal-00322281, version 1

Citation

Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. ⟨hal-00322281⟩

Share

Metrics

Record views

253