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High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method

P. Chaudhuri A. Bhaduri A. Bandyopadhyay S. Vignoli P.P. Ray Christophe Longeaud 1
1 LGEP - Laboratoire de génie électrique de Paris
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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00322282
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, September 17, 2008 - 11:08:17 AM
Last modification on : Thursday, June 17, 2021 - 3:47:41 AM

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  • HAL Id : hal-00322282, version 1

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CNRS | SUPELEC | UPMC | SUP_LGEP | SORBONNE-UNIVERSITE | EC-PARIS

Citation

P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P.P. Ray, et al.. High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. ⟨hal-00322282⟩

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