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Device grade hydrogenated polymorphous silicon deposited at high rates

Yrebegnan Moussa Soro 1 A. Abramov Marie-Estelle Gueunier-Farret 1 E.V. Johnson Christophe Longeaud 1 Pere Roca I Cabarrocas Jean-Paul Kleider 1
1 LGEP - Laboratoire de génie électrique de Paris
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https://hal-supelec.archives-ouvertes.fr/hal-00350767
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, January 7, 2009 - 4:06:49 PM
Last modification on : Wednesday, October 21, 2020 - 2:01:00 PM

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  • HAL Id : hal-00350767, version 1

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Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2092. ⟨hal-00350767⟩

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