Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

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https://hal-supelec.archives-ouvertes.fr/hal-00350864
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, January 7, 2009 - 4:53:17 PM
Last modification on : Monday, December 17, 2018 - 1:33:49 AM

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  • HAL Id : hal-00350864, version 1

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A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, Elsevier, 2008, pp.944. ⟨hal-00350864⟩

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