Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

Jean-Paul Kleider; A.S. Gudovskikh; Pere Roca I Cabarrocas

Journal articles

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

Jean-Paul Kleider ¹ A.S. Gudovskikh Pere Roca I Cabarrocas

1 LGEP - Laboratoire de génie électrique de Paris

Document type :

Journal articles

Complete list of metadata

https://hal-supelec.archives-ouvertes.fr/hal-00350871
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, January 7, 2009 - 4:58:15 PM
Last modification on : Thursday, June 17, 2021 - 3:48:05 AM

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

Identifiers

Collections

Citation

Export

Metrics

149

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

Identifiers

Collections

Citation

Export

Share

Metrics

149