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Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

Jean-Paul Kleider 1 A.S. Gudovskikh Pere Roca I Cabarrocas
1 LGEP - Laboratoire de génie électrique de Paris
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https://hal-supelec.archives-ouvertes.fr/hal-00350871
Contributor : Olivier Schneegans Connect in order to contact the contributor
Submitted on : Wednesday, January 7, 2009 - 4:58:15 PM
Last modification on : Thursday, June 17, 2021 - 3:48:05 AM

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  • HAL Id : hal-00350871, version 1

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Jean-Paul Kleider, A.S. Gudovskikh, Pere Roca I Cabarrocas. Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements. Applied Physics Letters, American Institute of Physics, 2008, 92, pp.162101. ⟨hal-00350871⟩

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