Polymorphous silicon thin films deposited at high rate: transport properties and density of states

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Submitted on : Wednesday, January 7, 2009 - 5:07:13 PM
Last modification on : Friday, December 14, 2018 - 1:28:30 AM

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  • HAL Id : hal-00350886, version 1

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Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. Thin Solid Films, Elsevier, 2008, 516, pp.6888. ⟨hal-00350886⟩

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