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Study of GaInP heterojunction solar cell interface properties by admittance spectroscopy

A.S. Gudovskikh Jean-Paul Kleider 1 Rémy Chouffot 1 N.A. Kaluzhniy V. Lantratov S.A. Mintairov
1 LGEP - Laboratoire de génie électrique de Paris
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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00351244
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Submitted on : Thursday, January 8, 2009 - 5:10:56 PM
Last modification on : Thursday, June 17, 2021 - 3:49:25 AM

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  • HAL Id : hal-00351244, version 1

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CNRS | SUPELEC | UPMC | SUP_LGEP | SORBONNE-UNIVERSITE | EC-PARIS

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A.S. Gudovskikh, Jean-Paul Kleider, Rémy Chouffot, N.A. Kaluzhniy, V. Lantratov, et al.. Study of GaInP heterojunction solar cell interface properties by admittance spectroscopy. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings. ⟨hal-00351244⟩

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